Surface morphology of MOCVD-grown GaN on sapphire

被引：0

作者：

Tisch, U ^{[1
]}

Zamir, S ^{[1
]}

Rotschild, A ^{[1
]}

Moreno, K ^{[1
]}

Beckman, D ^{[1
]}

Harari, A ^{[1
]}

Samid, I ^{[1
]}

Weiser, K ^{[1
]}

Salzman, J ^{[1
]}

机构：

[1] Technion Israel Inst Technol, Dept Elect Engn, IL-32000 Haifa, Israel

来源：

MELECON '98 - 9TH MEDITERRANEAN ELECTROTECHNICAL CONFERENCE, VOLS 1 AND 2 | 1998年

关键词：

D O I：

暂无

中图分类号：

TP [自动化技术、计算机技术];

学科分类号：

0812 ;

摘要：

Thin GaN layers on Sapphire were grown by metal organic chemical vapor deposition (MOCVD) and characterized by x-ray diffraction and photoluminescence. AFM and SEM studies show flat surfaces with pyramid-like and truncated pyramid-like hexagonal hillocks. Their inclined faces, which form low angles (4.5 degrees - 10.5 degrees) with the (0001) plane, are smooth and continuous. They can be interpreted as high index {01 (1) over bar l}vicinal surfaces.

引用

页码：1419 / 1422

页数：4

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