Reliability evaluation of AlGaN/GaN HEMTs grown on SiC substrate

被引：10

作者：

Lee, C ^{[1
]}

Witkowski, L ^{[1
]}

Muir, M ^{[1
]}

Tserng, HQ ^{[1
]}

Saunier, P ^{[1
]}

Wang, H ^{[1
]}

Yang, J ^{[1
]}

Khan, MA ^{[1
]}

机构：

[1] TriQuint Semicond Texas, Richardson, TX 75080 USA

来源：

IEEE LESTER EASTMAN CONFERENCE ON HIGH PERFORMANCE DEVICES, PROCEEDINGS | 2002年

关键词：

D O I：

10.1109/LECHPD.2002.1146785

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

AlGaN/GaN HEMTs have achieved record output power densities at microwave frequencies; however, reliability of these devices is still a major concern. In this paper, the results of DC and RF stress tests at several drain voltages of passivated 75 mum. devices are discussed. After DC stress for 48 hours, negligible differences in IN and small signal performance were observed in some devices, while significant reduction in drain current, decrease in transconductance, and increase in on-resistance were measured in some other devices. RF stress for 40 hours has resulted in lower transconductance and drain current and degradation in power performance at 10 GHz. A comprehensive comparison of equivalent circuit models before and after stress is presented.

引用

页码：436 / 442

页数：7

共 50 条

[1] Reliability evaluation of high power AlGaN/GaN HEMTs on SiC substrate
Kim, H
Tilak, V
Green, BM
Smart, JA
Schaff, WJ
Shealy, JR
Eastman, LF
[J]. PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2001, 188 (01): : 203 - 206
[2] AlGaN/GaN HEMTs grown on SiC substrates
Binari, SC
Redwing, JM
Kelner, G
Kruppa, W
[J]. ELECTRONICS LETTERS, 1997, 33 (03) : 242 - 243
[3] Reliability Assessment Of AlGaN/GaN HEMTs on the SiC Substrate Under the RF Stress
Moultif, Niemat
Latry, Olivier
Joubert, Eric
Ndiaye, Mohamed
Moreau, Christian
Goupy, Jean-Francois
Carton, Patrick
[J]. IEEE TRANSACTIONS ON POWER ELECTRONICS, 2021, 36 (07) : 7442 - 7450
[4] MBE-grown AlGaN/GaN HEMTs on SiC
Rajan, S
Chakraborty, A
Mishra, UK
Poblenz, C
Waltereit, P
Speck, JS
[J]. High Performance Devices, Proceedings, 2005, : 108 - 113
[5] AlGaN/GaN HEMTs on epitaxies grown on composite substrate
Hoel, V.
Boulay, S.
Gerard, H.
Rabaland, V.
Delos, E.
De Jaeger, J. C.
Di-Forte-Poisson, M. A.
Brylinski, C.
Lahreche, H.
Langer, R.
Bove, P.
[J]. 2007 EUROPEAN MICROWAVE INTEGRATED CIRCUITS CONFERENCE, VOLS 1 AND 2, 2007, : 480 - +
[6] AlGaN/GaN/AlGaN DH-HEMTs Grown on a Patterned Silicon Substrate
Comyn, Remi
Chenot, Sebastien
El Alouani, Wissam
Nemoz, Maud
Frayssinet, Eric
Damilano, Benjamin
Cordier, Yvon
[J]. PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2018, 215 (09):
[7] Impact of the substrate and of the nucleation layer on the properties of AlGaN/GaN HEMTs on SiC
Gamarra, P.
Lacam, C.
Tordjman, M.
di Forte-Poisson, M-A
[J]. JOURNAL OF CRYSTAL GROWTH, 2013, 370 : 282 - 287
[8] Effects of the Fe-doped GaN Buffer in AlGaN/GaN HEMTs on SiC Substrate
Hou-Yu-Wang
Kai-Di-Mai
Peng, Li-Yi
Cheng, Yuan-Hsiang
Chiu, Hsien-Chin
[J]. PROCEEDINGS OF THE 2015 IEEE INTERNATIONAL CONFERENCE ON ELECTRON DEVICES AND SOLID-STATE CIRCUITS (EDSSC), 2015, : 645 - 648
[9] Thermal Analysis of AlN/GaN/AlGaN HEMTs grown on Si and SiC Substrate through TCAD Simulations and Measurements
Sahoo, A. K.
Subramani, N. K.
Nallatamby, J-C.
Sommet, R.
Quere, R.
Rolland, N.
Medjdoub, F.
[J]. 2016 11TH EUROPEAN MICROWAVE INTEGRATED CIRCUITS CONFERENCE (EUMIC), 2016, : 149 - 152
[10] High transconductance enhancement-mode AlGaN/GaN HEMTs on SiC substrate
Kumar, V
Kuliev, A
Tanaka, T
Otoki, Y
Adesida, I
[J]. ELECTRONICS LETTERS, 2003, 39 (24) : 1758 - 1760

← 1 2 3 4 5 →