Reliability evaluation of high power AlGaN/GaN HEMTs on SiC substrate

被引：1

作者：

Kim, H ^{[1
]}

Tilak, V ^{[1
]}

Green, BM ^{[1
]}

Smart, JA ^{[1
]}

Schaff, WJ ^{[1
]}

Shealy, JR ^{[1
]}

Eastman, LF ^{[1
]}

机构：

[1] Cornell Univ, Sch Elect & Comp Engn, Ithaca, NY 14850 USA

来源：

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE | 2001年 / 188卷 / 01期

关键词：

D O I：

10.1002/1521-396X(200111)188:1<203::AID-PSSA203>3.3.CO;2-3

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Undoped AlGaN/GaN HEMTs grown on SiC substrates have recently demonstrated record output power density of 10.7 W/mm (cw) and total output power of 10 W at 10 GHz (L. F. EASTMAN, Joint ONR/MURI Review (5/15-16, 2001), CA (USA) [1]). In this paper, we present the results of reliability tests performed on undoped AlGaN/GaN HEMTs on SiC under dc and rf stress conditions. Undoped AlGaN/GaN HEWS on SiC substrates have been submitted to on-wafer dc and rf stress conditions at a room temperature and the degradation in device performance induced by hot electron and thermal effects have been observed.

引用

页码：203 / 206

页数：4

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