SIMS depth profiling of 'frozen' samples: in search of ultimate depth resolution regime

被引：2

作者：

Kudriavtsev, Y. ^{[1
]}

Hernandez, A. ^{[1
]}

Asomoza, R. ^{[1
]}

Gallardo, S. ^{[2
]}

Lopez, M. ^{[2
]}

Moiseev, K. ^{[3
]}

机构：

[1] IPN, CINVESTAV, Dept Ingn Elect SEES, Mexico City, DF, Mexico

[2] IPN, CINVESTAV, Dept Fis, Mexico City, DF, Mexico

[3] Ioffe Phys Tech Inst, St Petersburg, Russia

来源：

SURFACE AND INTERFACE ANALYSIS | 2017年 / 49卷 / 02期

关键词：

SIMS; depth resolution; surface roughness; surface segregation;

D O I：

10.1002/sia.6067

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

We have performed secondary ion mass spectrometry depth profiling analysis of III-V based hetero-structures at different target temperatures and found that both the surface segregation and surface roughness caused by ion sputtering can be radically reduced if the sample temperature is lowered to - 150 degrees C. The depth profiling of 'frozen' samples can be a good alternative to sample rotation and oxygen flooding used for ultra-low-energy depth profiling of compound semiconductors. Copyright (C) 2016 John Wiley & Sons, Ltd.

引用

页码：145 / 148

页数：4

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