SIMS AND DEPTH PROFILING OF SEMICONDUCTOR STRUCTURES

被引：12
|
作者：
SVENSSON, BG [1 ]
LINNARSSON, MK [1 ]
MOHADJERI, B [1 ]
PETRAVIC, M [1 ]
WILLIAMS, JS [1 ]
机构：
[1] AUSTRALIAN NATL UNIV,CANBERRA,ACT 0200,AUSTRALIA
来源：
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 1994年 / 85卷 / 1-4期
关键词：
D O I：
10.1016/0168-583X(94)95845-9
中图分类号：
TH7 [仪器、仪表];
学科分类号：
0804 ; 080401 ; 081102 ;
摘要：
This paper reviews recent secondary ion mass spectrometry (SIMS) work on (i) isotope shifts in ion implantation profiles, (ii) dopant profiles in silicon and beam-induced oxidation and (iii) surface roughness and profile broadening of Al(x)Ga1-(x)As/GaAs superlattice structures. Comparison is made with other techniques, and, in particular, the issues of depth resolution and conversion between sputtering time and sample depth are emphasized.
引用
收藏
页码：363 / 369
页数：7
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