SIMS quantitative depth profiling of matrix elements in semiconductor layers

被引：11
|
作者：
Guryanov, G.
Clair, T. P. St.
Bhat, R.
Caneau, C.
Nikishin, S.
Borisov, B.
Budrevich, A.
机构：
[1] Corning Inc, Corning, NY 14831 USA
[2] Texas Tech Univ, Lubbock, TX 79409 USA
[3] Intel Corp, Hillsboro, OR 97124 USA
来源：
APPLIED SURFACE SCIENCE | 2006年 / 252卷 / 19期
关键词：
SIMS; XPS; RBS; semiconductor compound; quantification;
D O I：
10.1016/j.apsusc.2006.02.254
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
A new SIMS approach is proposed for quantified depth profiling of III-V semiconductor alloys. We show that the ratio of MCs+ ion intensities to the sum of all element intensities (M1Cs+ + M2Cs+...) from semiconductor alloys gives accurate elemental mole fraction when elements from the same periodic group are considered. Results obtained using SIMS show good agreement with data acquired using XPS and RBS. (c) 2006 Elsevier B.V All rights reserved.
引用
收藏
页码：7208 / 7210
页数：3
相关论文
共 50 条
  • [1] SIMS AND DEPTH PROFILING OF SEMICONDUCTOR STRUCTURES
    SVENSSON, BG
    LINNARSSON, MK
    MOHADJERI, B
    PETRAVIC, M
    WILLIAMS, JS
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1994, 85 (1-4): : 363 - 369
  • [2] Quantitative SIMS depth profiling for complex multilayers
    Tsinghua Univ, Beijing, China
    Qinghua Daxue Xuebao, 4 (14-18):
  • [3] Quantitative depth profiling of thin layers
    Wetzig, K
    Baunack, S
    Hoffmann, V
    Oswald, S
    Prassler, F
    FRESENIUS JOURNAL OF ANALYTICAL CHEMISTRY, 1997, 358 (1-2): : 25 - 31
  • [4] Quantitative depth profiling of thin layers
    K. Wetzig
    S. Baunack
    V. Hoffmann
    S. Oswald
    F. Präßler
    Fresenius' Journal of Analytical Chemistry, 1997, 358 : 25 - 31
  • [5] QUANTITATIVE HYDROGEN DEPTH-PROFILING USING SIMS
    LUNDQUIST, TR
    BURGNER, RP
    SWANN, PR
    TSONG, IST
    APPLIED SURFACE SCIENCE, 1981, 7 (1-2) : 2 - 6
  • [6] ON THE SIMS DEPTH PROFILING ANALYSIS - REDUCTION OF MATRIX EFFECT
    GAO, Y
    MARIE, Y
    SALDI, F
    MIGEON, HN
    INTERNATIONAL JOURNAL OF MASS SPECTROMETRY AND ION PROCESSES, 1995, 143 : 11 - 18
  • [7] Ultralow-energy SIMS for shallow semiconductor depth profiling
    Chanbasha, A. R.
    Wee, A. T. S.
    APPLIED SURFACE SCIENCE, 2008, 255 (04) : 1307 - 1310
  • [8] SIMS depth profiling of semiconductor interfaces: Experimental study of depth resolution function
    Kudriavtsev, Yu
    Gallardo, S.
    Koudriavtseva, O.
    Escobosa, A.
    Sanchez-R, V. M.
    Avendano, M.
    Asomoza, R.
    Lopez-Lopez, M.
    SURFACE AND INTERFACE ANALYSIS, 2011, 43 (10) : 1277 - 1281
  • [9] SIMS depth profiling of Cr-conversion layers on aluminium
    Cuynen, E
    Lemberge, P
    Van Espen, P
    ELECTRON MICROSCOPY 1998, VOL 1: GENERAL INTEREST AND INSTRUMENTATION, 1998, : 369 - 370
  • [10] SIMS depth profiling of delta-doped layers in silicon
    Smirnov, VK
    Simakin, SG
    Potapov, EV
    Makarov, VV
    SURFACE AND INTERFACE ANALYSIS, 1996, 24 (07) : 469 - 475
12345