SIMS quantitative depth profiling of matrix elements in semiconductor layers

被引：11
|
作者：
Guryanov, G.
Clair, T. P. St.
Bhat, R.
Caneau, C.
Nikishin, S.
Borisov, B.
Budrevich, A.
机构：
[1] Corning Inc, Corning, NY 14831 USA
[2] Texas Tech Univ, Lubbock, TX 79409 USA
[3] Intel Corp, Hillsboro, OR 97124 USA
来源：
APPLIED SURFACE SCIENCE | 2006年 / 252卷 / 19期
关键词：
SIMS; XPS; RBS; semiconductor compound; quantification;
D O I：
10.1016/j.apsusc.2006.02.254
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
A new SIMS approach is proposed for quantified depth profiling of III-V semiconductor alloys. We show that the ratio of MCs+ ion intensities to the sum of all element intensities (M1Cs+ + M2Cs+...) from semiconductor alloys gives accurate elemental mole fraction when elements from the same periodic group are considered. Results obtained using SIMS show good agreement with data acquired using XPS and RBS. (c) 2006 Elsevier B.V All rights reserved.
引用
收藏
页码：7208 / 7210
页数：3
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