SIMS depth profiling of 'frozen' samples: in search of ultimate depth resolution regime

被引：2
|
作者：
Kudriavtsev, Y. [1 ]
Hernandez, A. [1 ]
Asomoza, R. [1 ]
Gallardo, S. [2 ]
Lopez, M. [2 ]
Moiseev, K. [3 ]
机构：
[1] IPN, CINVESTAV, Dept Ingn Elect SEES, Mexico City, DF, Mexico
[2] IPN, CINVESTAV, Dept Fis, Mexico City, DF, Mexico
[3] Ioffe Phys Tech Inst, St Petersburg, Russia
来源：
SURFACE AND INTERFACE ANALYSIS | 2017年 / 49卷 / 02期
关键词：
SIMS; depth resolution; surface roughness; surface segregation;
D O I：
10.1002/sia.6067
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
We have performed secondary ion mass spectrometry depth profiling analysis of III-V based hetero-structures at different target temperatures and found that both the surface segregation and surface roughness caused by ion sputtering can be radically reduced if the sample temperature is lowered to - 150 degrees C. The depth profiling of 'frozen' samples can be a good alternative to sample rotation and oxygen flooding used for ultra-low-energy depth profiling of compound semiconductors. Copyright (C) 2016 John Wiley & Sons, Ltd.
引用
收藏
页码：145 / 148
页数：4
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