High-field electron transport in GaInP

被引：1

作者：

Sakamoto, R ^{[1
]}

Nakata, K ^{[1
]}

Nakajima, S ^{[1
]}

机构：

[1] Sumitomo Elect Ind Ltd, Optoelect Res & Dev Labs, Sakae Ku, Yokohama, Kanagawa 2448588, Japan

来源：

PHYSICA B | 1999年 / 272卷 / 1-4期

关键词：

GaInP; high breakdown voltage; high drift velocity;

D O I：

10.1016/S0921-4526(99)00428-7

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

We report on the high-field electron transport properties in a GaInP. In contrast to the results on a GaAs, the drift velocity does not saturate and no negative differential resistance (NDR) is observed up to 5 kV/cm; the velocity is about 1 x 10(7) cm/s at an electric field of around 15 kV/cm. The energy difference between Gamma- and L-valley is estimated to be 300 meV with the temperature dependence of the peak velocity. (C) 1999 Elsevier Science B.V. All rights reserved.

引用

页码：250 / 252

页数：3

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