Impact ionization and high-field electron transport in GaN

被引：0

作者：

Kuligk, A. ^{[1
]}

Fitzer, N. ^{[1
]}

Redmer, R. ^{[1
]}

机构：

[1] Univ Rostock, Inst Phys, D-2500 Rostock 1, Germany

来源：

NONEQUILIBRIUM CARRIER DYNAMICS IN SEMICONDUCTORS PROCEEDINGS | 2006年 / 110卷

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Ab initio band structure calculations were performed for GaAs, GaN, and ZnS within density functional theory to determine the impact ionization rate and the high-field electron transport characteristics. The drift velocity, mean kinetic energy, valley populations, and the ionization coefficient are gained from full-band ensemble Monte Carlo simulations. A pronounced influence of the band structure is found for all materials. Results are shown here for GaN.

引用

页码：139 / +

页数：2

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