Infrared reflection characteristics in InN thin films grown by magnetron sputtering for the application of plasma filters

被引：30
|
作者：
Qian, ZG
Shen, WZ
Ogawa, H
Guo, QX
机构：
[1] Shanghai Jiao Tong Univ, Dept Phys, Lab Condensed Matter Spect & Optoelect Phys, Shanghai 200030, Peoples R China
[2] Saga Univ, Fac Sci & Engn, Dept Elect & Elect Engn, Saga 8408502, Japan
[3] Saga Univ, Venture Business Lab, Saga, Japan
来源：
JOURNAL OF APPLIED PHYSICS | 2002年 / 92卷 / 07期
关键词：
D O I：
10.1063/1.1506199
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We study the IR reflection characteristics (400-10000 cm(-1)) of InN thin films grown by radio frequency magnetron sputtering on GaAs (111) substrates. The plasma oscillation, carrier concentration, and mobility are obtained and discussed by calculating the IR reflection spectra. The suitability of InN thin films for the application of plasma filters has been revealed by investigating the performance of InN plasma filters with different carrier concentration, mobility, and film thickness. Two InN plasma filters have been designed for the widely used GaSb and GaInAsSb photovoltaic cells in thermophotovoltaic systems, which show good performance. The advantages of InN thin film as plasma filter material over the conventional transparent conducting oxides and heavily doped Si materials have also been discussed. (C) 2002 American Institute of Physics.
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收藏
页码：3683 / 3687
页数：5
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