Piezoelectric coefficient of InN thin films prepared by magnetron sputtering

被引：9
|
作者：
Cao, CB [1 ]
Chan, HLW
Choy, CL
机构：
[1] Beijing Inst Technol, Res Ctr Mat Sci, Beijing 100081, Peoples R China
[2] Hong Kong Polytech Univ, Dept Appl Phys, Kowloon, Hong Kong, Peoples R China
[3] Hong Kong Polytech Univ, Mat Res Ctr, Kowloon, Hong Kong, Peoples R China
来源：
THIN SOLID FILMS | 2003年 / 441卷 / 1-2期
关键词：
indium nitride; piezoelectric coefficient; magnetron sputtering;
D O I：
10.1016/S0040-6090(03)00889-7
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Indium nitride (InN) thin films have been deposited on Si(1 0 0) and Pt(1 1 1)/Ti/SiO2/Si(1 0 0) substrates by reactive r.f. magnetron sputtering. By using a plasma power of 25 W, nitrogen gas pressure of 5-7 mTorr and substrate temperature of 300-400 degreesC, InN films with (0 0 0 2) orientation were obtained. The relative permittivity and electrical resistivity of the InN film were calculated from the measured electrical impedance. The piezoelectric coefficient d(33) of the InN film was measured by a heterodyne interferometer and found to be 3.12+/-0. 10 pm V-1. (C) 2003 Elsevier B.V. All rights reserved.
引用
收藏
页码：287 / 291
页数：5
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