Capacitance characteristics in InN thin films grown by reactive sputtering on GaAs

被引：3
|
作者：
Pan, W
Qian, ZG
Shen, WZ
Ogawa, H
Guo, QX
机构：
[1] Shanghai Jiao Tong Univ, Dept Phys, Lab Condensed Matter Spect & Optoelect Phys, Shanghai 200030, Peoples R China
[2] Saga Univ, Fac Sci & Engn, Dept Elect & Elect Engn, Saga 8408502, Japan
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 2003年 / 42卷 / 9A期
关键词：
InN; reactive sputtering; capacitance characteristics; Raman measurements;
D O I：
10.1143/JJAP.42.5551
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We have carried out room temperature investigation of growth-dependent capacitance-frequency characteristics in InN thin films grown by rf magnetron sputtering on semi-insulating GaAs Substrates. A negative capacitance (NC) effect has been observed in these InN thin films. Based on a barrier free model for the InN thin films and a transient current model of charging-discharging and inertial conductance for the InN/GaAs interface states, we attribute the NC effect to the carrier capture and emission at the InN/GaAs interface states, by aid of a comparative study on an InN thin film on sapphire substrate. We have demonstrated the dependence of the NC effect on the growth temperature and the sputtering pressure as well as the bias. The observed NC phenomenon provides experimental evidence for high-speed device applications of InN.
引用
收藏
页码：5551 / 5556
页数：6
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