Growth of InN films on (111)GaAs substrates by reactive magnetron sputtering

被引：13
|
作者：
Guo, QX [1 ]
Murata, K [1 ]
Nishio, M [1 ]
Ogawa, H [1 ]
机构：
[1] Saga Univ, Fac Sci & Engn, Dept Elect & Elect Engn, Saga 8408502, Japan
来源：
APPLIED SURFACE SCIENCE | 2001年 / 169卷
关键词：
indium nitride; reactive sputtering; GaAs substrate; sputtering pressure; substrate temperature;
D O I：
10.1016/S0169-4332(00)00672-3
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
Indium nitride (InN) films were grown on (111)GaAs substrates by reactive magnetron sputtering using an indium target. It was found that the crystal quality of LnN films depends strongly on the substrate temperature and sputtering gas pressure, and highly c-axis preferred wurtzite InN films can be obtained at growth temperature as low as 100 degreesC. Based on these results, the growth mechanism of LnN films in the reactive magnetron sputtering was discussed. (C) 2001 Elsevier Science B.V. All rights reserved.
引用
收藏
页码：340 / 344
页数：5
相关论文
共 50 条
  • [1] Optical constants of InN thin films on (111) GaAs grown by reactive magnetron sputtering
    Yang, HF
    Shen, WZ
    Qian, ZG
    Pang, QJ
    Ogawa, H
    Guo, QX
    [J]. JOURNAL OF APPLIED PHYSICS, 2002, 91 (12) : 9803 - 9808
  • [2] Growth of AIN films on Si(100) and Si(111) substrates by reactive magnetron sputtering
    Zhang, JX
    Cheng, H
    Chen, YZ
    Uddin, A
    Yuan, S
    Geng, SJ
    Zhang, S
    [J]. SURFACE & COATINGS TECHNOLOGY, 2005, 198 (1-3): : 68 - 73
  • [3] Growth and nanostructure of InN thin films deposited by reactive magnetron sputtering
    Takai, O
    Ikuta, K
    Inoue, Y
    [J]. THIN SOLID FILMS, 1998, 318 (1-2) : 148 - 150
  • [4] Growth of GaAs nanowhisker arrays by magnetron sputtering on Si(111) substrates
    I. P. Soshnikov
    V. G. Dubrovskii
    N. V. Sibirev
    V. T. Barchenko
    A. V. Veretekha
    G. E. Cirlin
    V. M. Ustinov
    [J]. Technical Physics Letters, 2006, 32 : 520 - 522
  • [5] Growth of GaAs nanowhisker arrays by magnetron sputtering on Si(111) substrates
    Soshnikov, I. P.
    Dubrovskii, V. G.
    Sibirev, N. V.
    Barchenko, V. T.
    Veretekha, A. V.
    Cirlin, G. E.
    Ustinov, V. M.
    [J]. TECHNICAL PHYSICS LETTERS, 2006, 32 (06) : 520 - 522
  • [6] InN thin films deposited on flexible substrates by reactive RF-magnetron sputtering
    Zoita, N. C.
    Besleaga, C.
    Braic, L.
    Mitran, T.
    Grigorescu, C.
    Nedelcu, L.
    [J]. OPTOELECTRONICS AND ADVANCED MATERIALS-RAPID COMMUNICATIONS, 2008, 2 (11): : 719 - 720
  • [7] Reactive Sputtering Growth and Characterizations of InN thin films on Si Substrates
    Amirhoseiny, Maryam
    Hassan, Zainuriah
    Shiong, Ng Sha
    Ahmad, Mohd Anas
    [J]. ADVANCEMENT OF MATERIALS AND NANOTECHNOLOGY II, 2012, 545 : 290 - 293
  • [8] Low-temperature growth of InN films on (111)GaAs substrates
    Guo, QX
    Nishio, M
    Ogawa, H
    Yoshida, A
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1999, 38 (5A): : L490 - L491
  • [9] Low-Temperature Growth of InN Films on (111)GaAs Substrates
    Guo, Qixin
    Nishio, Mitsuhiro
    Ogawa, Hiroshi
    Yoshida, Akira
    [J]. Japanese Journal of Applied Physics, Part 2: Letters, 1999, 38 (5 PART 2): : 490 - 491
  • [10] Annealing characteristics of Zn-doped InN Films on sapphire substrates by reactive magnetron sputtering
    [J]. Chen, L.-C. (ocean@ntut.edu.tw), 1600, Japan Society of Applied Physics (44):
12345