Growth of InN films on (111)GaAs substrates by reactive magnetron sputtering

被引：13

作者：

Guo, QX ^{[1
]}

Murata, K ^{[1
]}

Nishio, M ^{[1
]}

Ogawa, H ^{[1
]}

机构：

[1] Saga Univ, Fac Sci & Engn, Dept Elect & Elect Engn, Saga 8408502, Japan

来源：

APPLIED SURFACE SCIENCE | 2001年 / 169卷

关键词：

indium nitride; reactive sputtering; GaAs substrate; sputtering pressure; substrate temperature;

D O I：

10.1016/S0169-4332(00)00672-3

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Indium nitride (InN) films were grown on (111)GaAs substrates by reactive magnetron sputtering using an indium target. It was found that the crystal quality of LnN films depends strongly on the substrate temperature and sputtering gas pressure, and highly c-axis preferred wurtzite InN films can be obtained at growth temperature as low as 100 degreesC. Based on these results, the growth mechanism of LnN films in the reactive magnetron sputtering was discussed. (C) 2001 Elsevier Science B.V. All rights reserved.

引用

页码：340 / 344

页数：5

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