Direct Growth and Electrical Properties of YH2 (111) Epitaxial Thin Films on CaF2 (111) and (001) Substrates by Reactive Magnetron Sputtering

被引：1

作者：

Hasegawa, Naoto ^{[1
]}

Kawasoko, Hideyuki ^{[1
]}

Fukumura, Tomoteru ^{[1
,2
]}

机构：

[1] Tohoku Univ, Grad Sch Sci, Dept Chem, Sendai, Miyagi 9808578, Japan

[2] Tohoku Univ, Adv Inst Mat Res & Core Res Cluster, Sendai, Miyagi 9808577, Japan

来源：

CHEMISTRY LETTERS | 2020年 / 49卷 / 10期

关键词：

Rare earth hydride; Epitaxial thin film; Electrical properties; OPTICAL-PROPERTIES; LANTHANUM HYDRIDE; YTTRIUM; HYDROGEN;

D O I：

10.1246/cl.200420

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

YH2 (111) epitaxial thin films with two and four rotational crystal domains were directly grown both on CaF2 (111) and (001) substrates, respectively, at various growth temperature by reactive magnetron sputtering. The low growth temperature and the small number of crystal domains led to low resistivity in YH2 (111) epitaxial thin films, probably attributed to less hydrogen deficiency in the films. Mobility as high as 14.3 cm(2)/Vs was obtained at 2K possibly due to homogeneous hydrogen distribution.

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页码：1181 / 1184

页数：4

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