Growth and nanostructure of InN thin films deposited by reactive magnetron sputtering

被引：22
|
作者：
Takai, O [1 ]
Ikuta, K [1 ]
Inoue, Y [1 ]
机构：
[1] Nagoya Univ, Dept Mat Proc Engn, Chikusa Ku, Nagoya, Aichi 46401, Japan
来源：
THIN SOLID FILMS | 1998年 / 318卷 / 1-2期
关键词：
indium nitride; substrate; nanostructure;
D O I：
10.1016/S0040-6090(97)01154-1
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
We have prepared indium nitride (InN) thin films on glass and (0001) alpha-Al2O3 substrates by rf reactive magnetron sputtering and studied their growth and nanostructure using analytical techniques such as X-ray diffraction (XRD), reflection high energy electron diffraction (RHEED) and atomic force microscopy (AFM). The growth and nanostructure are strongly affected by the He addition to the Ar-N-2 sputtering gas mixture. The c-axis preferentially oriented structure is formed by the He addition. This effect of the He addition occurs similarly both for glass and for(0001) alpha-Al2O3 substrates. (C) 1998 Elsevier Science S.A.
引用
收藏
页码：148 / 150
页数：3
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