Characteristics of charge trap flash memory with Al2O3/(Ta/Nb)Ox/Al2O3 multi-layer

被引：0

作者：

Nabatame, T. ^{[1
,2
]}

Ohi, A. ^{[1
,2
]}

Ito, K. ^{[3
]}

Takahashi, M. ^{[3
]}

Chikyo, T. ^{[1
,2
]}

机构：

[1] Natl Inst Mat Sci, MANA Foundry, 1-1 Namiki, Tsukuba, Ibaraki 3050044, Japan

[2] Natl Inst Mat Sci, Nano Elect Mat Unit, WPI MANA, Tsukuba, Ibaraki 3050044, Japan

[3] Osaka Univ, Joining & Welding Res Inst, Ibaraki, Osaka 5670047, Japan

来源：

DIELECTRICS FOR NANOSYSTEMS 6: MATERIALS SCIENCE, PROCESSING, RELIABILITY, AND MANUFACTURING | 2014年 / 61卷 / 02期

关键词：

OXIDE; CAPACITORS; RETENTION; DEVICES; LAYER;

D O I：

10.1149/06102.0293ecst

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

In this paper we studied characteristics of the Pt/Al2O3/(Ta/Nb)O-x/Al2O3/SiO2/p-Si capacitors, fabricated by using atomic layer deposition at 200 degrees C. Note that a large flatband voltage shift (Delta V-fb) value of more than 8 V appears after programming at 1 mC/cm(2) because large amount of charge is trapped in the Al2O3/(Ta/Nb)O-x/Al2O3 structure. The Delta V-fb which occurred after programming decreases with increasing retention time under bias voltage at -5 MV/cm. We found that the electron detrapping occurs easily across the tunneling layer rather than the blocking layer.

引用

页码：293 / 300

页数：8

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