Characteristics of charge trap flash memory with Al2O3/(Ta/Nb)Ox/Al2O3 multi-layer

被引：0
|
作者：
Nabatame, T. [1 ,2 ]
Ohi, A. [1 ,2 ]
Ito, K. [3 ]
Takahashi, M. [3 ]
Chikyo, T. [1 ,2 ]
机构：
[1] Natl Inst Mat Sci, MANA Foundry, 1-1 Namiki, Tsukuba, Ibaraki 3050044, Japan
[2] Natl Inst Mat Sci, Nano Elect Mat Unit, WPI MANA, Tsukuba, Ibaraki 3050044, Japan
[3] Osaka Univ, Joining & Welding Res Inst, Ibaraki, Osaka 5670047, Japan
来源：
DIELECTRICS FOR NANOSYSTEMS 6: MATERIALS SCIENCE, PROCESSING, RELIABILITY, AND MANUFACTURING | 2014年 / 61卷 / 02期
关键词：
OXIDE; CAPACITORS; RETENTION; DEVICES; LAYER;
D O I：
10.1149/06102.0293ecst
中图分类号：
O646 [电化学、电解、磁化学];
学科分类号：
081704 ;
摘要：
In this paper we studied characteristics of the Pt/Al2O3/(Ta/Nb)O-x/Al2O3/SiO2/p-Si capacitors, fabricated by using atomic layer deposition at 200 degrees C. Note that a large flatband voltage shift (Delta V-fb) value of more than 8 V appears after programming at 1 mC/cm(2) because large amount of charge is trapped in the Al2O3/(Ta/Nb)O-x/Al2O3 structure. The Delta V-fb which occurred after programming decreases with increasing retention time under bias voltage at -5 MV/cm. We found that the electron detrapping occurs easily across the tunneling layer rather than the blocking layer.
引用
收藏
页码：293 / 300
页数：8
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