Impact of gate work-function on memory characteristics in Al2O3/HfOx/Al2O3/graphene charge-trap memory devices

被引：46

作者：

Lee, Sejoon ^{[1
,2
]}

Song, Emil B. ^{[2
]}

Kim, Sungmin ^{[2
]}

Seo, David H. ^{[3
]}

Seo, Sunae ^{[4
]}

Kang, Tae Won ^{[1
]}

Wang, Kang L. ^{[2
]}

机构：

[1] Dongguk Univ Seoul, Quantum Funct Semicond Res Ctr, Seoul 100715, South Korea

[2] Univ Calif Los Angeles, Dept Elect Engn, Los Angeles, CA 90095 USA

[3] Samsung Adv Inst Technol, Yongin 446712, Gyeonggi, South Korea

[4] Sejong Univ, Dept Phys, Seoul 143747, South Korea

来源：

APPLIED PHYSICS LETTERS | 2012年 / 100卷 / 02期

基金：

新加坡国家研究基金会;

关键词：

GRAPHENE OXIDE;

D O I：

10.1063/1.3675633

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Graphene-based non-volatile memory devices composed of a single-layer graphene channel and an Al2O3/HfOx/Al2O3 charge-storage layer exhibit memory functionality. The impact of the gate material's work-function (Phi) on the memory characteristics is investigated using different types of metals [Ti (Phi(Ti) = 4.3 eV) and Ni (Phi(Ni) = 5.2 eV)]. The ambipolar carrier conduction of graphene results in an enlargement of memory window (Delta V-M), which is similar to 4.5 V for the Ti-gate device and similar to 9.1 V for the Ni-gate device. The increase in Delta V-M is attributed to the change in the flat-band condition and the suppression of electron back-injection within the gate stack. (C) 2012 American Institute of Physics. [doi: 10.1063/1.3675633]

引用

页数：4

共 50 条

[1] Reduced electron back-injection in Al2O3/AlOx/Al2O3/graphene charge-trap memory devices
Lee, Sejoon
Song, Emil B.
Kim, Sung Min
Lee, Youngmin
Seo, David H.
Seo, Sunae
Wang, Kang L.
APPLIED PHYSICS LETTERS, 2012, 101 (24)
[2] Al2O3 optimization for Charge Trap Memory Application
Scozzari, C.
Albini, G.
Alessandri, M.
Amoroso, S.
Bacciaglia, P.
Del Vitto, A.
Ghidini, G.
ULIS 2008: PROCEEDINGS OF THE 9TH INTERNATIONAL CONFERENCE ON ULTIMATE INTEGRATION ON SILICON, 2008, : 191 - +
[3] Characteristics of charge trap flash memory with Al2O3/(Ta/Nb)Ox/Al2O3 multi-layer
Nabatame, T.
Ohi, A.
Ito, K.
Takahashi, M.
Chikyo, T.
DIELECTRICS FOR NANOSYSTEMS 6: MATERIALS SCIENCE, PROCESSING, RELIABILITY, AND MANUFACTURING, 2014, 61 (02): : 293 - 300
[4] Characterization of charge-trap memory chip of HfO2/Al2O3 multi-layers
Tang, Zhenjie, 1600, Science Press (34):
[5] A non-volatile AND gate based on Al2O3/HfO2/Al2O3 charge-trap stack for in-situ storage applications
Jingyu Li
Heng Zhang
Yi Ding
Jiayi Li
Shuiyuan Wang
David Wei Zhang
Peng Zhou
Science Bulletin, 2019, 64 (20) : 1518 - 1524
[6] A non-volatile AND gate based on Al2O3/HfO2/Al2O3 charge-trap stack for in-situ storage applications
Li, Jingyu
Zhang, Heng
Ding, Yi
Li, Jiayi
Wang, Shuiyuan
Zhang, David Wei
Zhou, Peng
SCIENCE BULLETIN, 2019, 64 (20) : 1518 - 1524
[7] The effect of fixed oxide charge in Al2O3 blocking dielectric on memory properties of charge trap flash memory devices
Jeon, S
Kim, C
ELECTROCHEMICAL AND SOLID STATE LETTERS, 2006, 9 (08) : G265 - G267
[8] Improvement of memory performance by high temperature annealing of the Al2O3 blocking layer in a charge-trap type flash memory device
Park, Jong Kyung
Park, Youngmin
Lim, Sung Kyu
Oh, Jae Sub
Joo, Moon Sig
Hong, Kwon
Cho, Byung Jin
APPLIED PHYSICS LETTERS, 2010, 96 (22)
[9] Memory characteristics of Al nanocrystals embedded in Al2O3 layers
Park, Byoungjun
Cho, Kyoungah
Moon, Byung-Moo
Kim, Sangsig
MICROELECTRONIC ENGINEERING, 2007, 84 (5-8) : 1627 - 1630
[10] Memory Characteristics of Al2O3/La2O3/SiO2 Multi-Layer Structures for Charge Trap Flash Devices
Cha, Seung-Yong
Kim, Hyo-June
Choi, Doo-Jin
KOREAN JOURNAL OF MATERIALS RESEARCH, 2009, 19 (09): : 462 - 467

← 1 2 3 4 5 →