Impact of gate work-function on memory characteristics in Al2O3/HfOx/Al2O3/graphene charge-trap memory devices

被引：46
|
作者：
Lee, Sejoon [1 ,2 ]
Song, Emil B. [2 ]
Kim, Sungmin [2 ]
Seo, David H. [3 ]
Seo, Sunae [4 ]
Kang, Tae Won [1 ]
Wang, Kang L. [2 ]
机构：
[1] Dongguk Univ Seoul, Quantum Funct Semicond Res Ctr, Seoul 100715, South Korea
[2] Univ Calif Los Angeles, Dept Elect Engn, Los Angeles, CA 90095 USA
[3] Samsung Adv Inst Technol, Yongin 446712, Gyeonggi, South Korea
[4] Sejong Univ, Dept Phys, Seoul 143747, South Korea
来源：
APPLIED PHYSICS LETTERS | 2012年 / 100卷 / 02期
基金：
新加坡国家研究基金会;
关键词：
GRAPHENE OXIDE;
D O I：
10.1063/1.3675633
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Graphene-based non-volatile memory devices composed of a single-layer graphene channel and an Al2O3/HfOx/Al2O3 charge-storage layer exhibit memory functionality. The impact of the gate material's work-function (Phi) on the memory characteristics is investigated using different types of metals [Ti (Phi(Ti) = 4.3 eV) and Ni (Phi(Ni) = 5.2 eV)]. The ambipolar carrier conduction of graphene results in an enlargement of memory window (Delta V-M), which is similar to 4.5 V for the Ti-gate device and similar to 9.1 V for the Ni-gate device. The increase in Delta V-M is attributed to the change in the flat-band condition and the suppression of electron back-injection within the gate stack. (C) 2012 American Institute of Physics. [doi: 10.1063/1.3675633]
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页数：4
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