Outstanding memory characteristics with atomic layer deposited Ta2O5/Al2O3/TiO2/Al2O3/Ta2O5 nanocomposite structures as the charge trapping layer

A charge trapping memory device using Ta2O5/Al2O3/TiO2/Al2O3/Ta2O5 (TATiAT) nanocomposite high-k dielectrics as charge trapping layer (CTL) and amorphous Al2O3 as the tunneling and blocking layers has been investigated, in which all the high-k dielectric films were fabricated by atomic layer deposition (ALD) technique. A large memory window of 10.0 V with higher charge trap density of 1.10 x 10(13) cm(-2) at gate voltage of +/- 10 V has been achieved. The better storage characteristic is attributed to the inter-diffusion between nanocomposite high-k oxides and the formation of more oxygen vacancies in CTL. The device shows the fast P/E speed and excellent endurance characteristics. A 70% initial memory window can be maintained after 10 years of retention by using the extrapolation method. The large conduction band offsets of 1.02 eV between TATiAT and Al2O3 is beneficial to retention characteristic due to the deep trap level.