Fast epitaxial growth of thick 4H-SiC with specular surface by chimney-type vertical hot-wall chemical vapor deposition

被引：4
|
作者：
Fujiwara, H
Danno, K
Kimoto, T
Tojo, T
Matsunami, H
机构：
[1] Kyoto Univ, Dept Elect Sci & Engn, Kyoto 6158510, Japan
[2] Dept Tech & Dev, Kagawa 7691612, Japan
来源：
SILICON CARBIDE AND RELATED MATERIALS 2003, PTS 1 AND 2 | 2004年 / 457-460卷
关键词：
vertical hot-wall CVD; micropipe closing; photoluminescence; fast epitaxy;
D O I：
10.4028/www.scientific.net/MSF.457-460.205
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Fast epitaxial growth of 4H-SiC epilayers at high temperatures has been investigated in a chimney-type vertical hot-wall chemical vapor deposition (CVD), which has enabled a high growth rate up to 44 mum/h with mirror-like surface morphology. The C/Si ratio dependencies of micropipe closing ratio, doping concentration and photoluminescence (PL) spectra have been investigated. High micropipe closing ratio of 94 similar to 100 % and low doping concentration of 6.7 x 10(12) cm(-3) have been achieved at a high growth rate of 19 mum/h. A 51 mum-thick epilayer grown at 36 mum/h led to produce high-voltage Ni SBDs (Schottky Barrier Diode) with a small ideality factor of 1.1 and a breakdown voltage of 3420 V.
引用
收藏
页码：205 / 208
页数：4
相关论文
共 50 条
  • [41] Chemical vapor deposition of 4H-SiC epitaxial layers on porous SiC substrates
    Mynbaeva, M
    Saddow, SE
    Melnychuk, G
    Nikitina, I
    Scheglov, M
    Sitnikova, A
    Kuznetsov, N
    Mynbaev, K
    Dmitriev, V
    APPLIED PHYSICS LETTERS, 2001, 78 (01) : 117 - 119
  • [42] Improved surface morphology and background doping concentration in 4H-SiC(000-1) epitaxial growth by hot-wall CVD
    Wada, A
    Kimoto, T
    Nishikawa, K
    Matsunami, H
    SILICON CARBIDE AND RELATED MATERIALS 2004, 2005, 483 : 85 - 88
  • [43] Epitaxial growth of 4H-SiC in a vertical hot-wall CVD reactor: comparison between up- and down-flow orientations
    Zhang, J.
    Ellison, A.
    Danielsson, Ö.
    Henry, A.
    Janzén, E.
    Materials Science Forum, 2001, 353-356 : 91 - 94
  • [44] Epitaxial growth of 4H-SiC in a vertical hot-wall CVD reactor:: Comparison between up- and down-flow orientations
    Zhang, J
    Ellison, A
    Danielsson, Ö
    Henry, A
    Janzén, E
    SILICON CARBIDE AND RELATED MATERIALS, ECSCRM2000, 2001, 353-356 : 91 - 94
  • [45] Influence of Different Hydrocarbons on Chemical Vapor Deposition Growth and Surface Morphological Defects in 4H-SiC Epitaxial Layers
    Ghezellou, Misagh
    Ul-Hassan, Jawad
    PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 2024, 261 (04):
  • [46] Epitaxial growth of 4H-SiC {0001} with large off-angles by chemical vapor deposition
    Saitoh, Hiroaki
    Manabe, Akira
    Kimoto, Tsunenobu
    Silicon Carbide and Related Materials 2005, Pts 1 and 2, 2006, 527-529 : 223 - 226
  • [47] Homoepitaxial growth on 4H-SiC substrates by chemical vapor deposition
    Hallin, Christer
    Khlebnikov, Igor
    Khlebnikov, Yuri
    Muzykov, Peter
    Berkman, Elif
    Sharma, Monica
    Stratiy, George
    Silan, Murat
    Basceri, Cent
    Balkas, Cengiz
    SILICON CARBIDE 2006 - MATERIALS, PROCESSING AND DEVICES, 2006, 911 : 113 - +
  • [48] Epitaxial synthesis of graphene on 4H-SiC by microwave plasma chemical vapor deposition
    Zhang, Xuemin
    Yan, Changling
    Zeng, Chunhong
    Sun, Tianyu
    Xing, Zheng
    Shi, Wenhua
    Wang, Yiqun
    Pang, Chao
    Zhang, Baoshun
    MATERIALS RESEARCH EXPRESS, 2020, 7 (11)
  • [49] Epitaxial growth of 4H-SiC on 4° off-axis (0001) and (000-1) substrates by hot-wall CVD
    Wada, Keiji
    Kimoto, Tsunenobu
    Nishikawa, Kimito
    Matsunami, Hiroyuki
    Silicon Carbide and Related Materials 2005, Pts 1 and 2, 2006, 527-529 : 219 - 222
  • [50] Fast homoepitaxial growth of 4H-SiC with low basal-plane dislocation density and low trap concentration by hot-wall chemical vapor deposition (vol 306, pg 297, 2007)
    Hori, Tsutomu
    Danno, Katsunori
    Kimoto, Tsunenobu
    JOURNAL OF CRYSTAL GROWTH, 2007, 308 (02) : 430 - 430
12345