Fast epitaxial growth of thick 4H-SiC with specular surface by chimney-type vertical hot-wall chemical vapor deposition

Fast epitaxial growth of 4H-SiC epilayers at high temperatures has been investigated in a chimney-type vertical hot-wall chemical vapor deposition (CVD), which has enabled a high growth rate up to 44 mum/h with mirror-like surface morphology. The C/Si ratio dependencies of micropipe closing ratio, doping concentration and photoluminescence (PL) spectra have been investigated. High micropipe closing ratio of 94 similar to 100 % and low doping concentration of 6.7 x 10(12) cm(-3) have been achieved at a high growth rate of 19 mum/h. A 51 mum-thick epilayer grown at 36 mum/h led to produce high-voltage Ni SBDs (Schottky Barrier Diode) with a small ideality factor of 1.1 and a breakdown voltage of 3420 V.