Fast homoepitaxial growth of 4H-SiC with low basal-plane dislocation density and low trap concentration by hot-wall chemical vapor deposition (vol 306, pg 297, 2007)

被引：1
|
作者：
Hori, Tsutomu
Danno, Katsunori
Kimoto, Tsunenobu
机构：
[1] Kyoto Univ, Dept Elect Sci & Engn, Kyoto 6158510, Japan
[2] NEOMAX Co, Hitachi Metals Ltd, Magnet Mat Res Lab, Mishima, Osaka 6180013, Japan
来源：
JOURNAL OF CRYSTAL GROWTH | 2007年 / 308卷 / 02期
关键词：
D O I：
10.1016/j.jcrysgro.2007.08.023
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
引用
收藏
页码：430 / 430
页数：1
相关论文
共 33 条
  • [1] Fast homoepitaxial growth of 4H-SiC with low basal-plane dislocation density and low trap concentration by hot-wall chemical vapor deposition
    Hori, Tsutomu
    Danno, Katsunori
    Kimoto, Tsunenobu
    JOURNAL OF CRYSTAL GROWTH, 2007, 306 (02) : 297 - 302
  • [2] Low trap concentration and low basal-plane dislocation density in 4H-SiC,Epilayers grown at high growth rate
    Hori, T.
    Danno, K.
    Kimoto, T.
    SILICON CARBIDE AND RELATED MATERIALS 2006, 2007, 556-557 : 129 - +
  • [3] Homoepitaxial growth and characterization of 4H-SiC epilayers by low-pressure hot-wall chemical vapor deposition
    Sun, Guosheng
    Gao, Xin
    Zhang, Yongxing
    Wang, Lei
    Zhao, Wanshun
    Zeng, Yiping
    Li, Jinmin
    Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors, 2004, 25 (12): : 1549 - 1554
  • [4] Homoepitaxial growth and characterization of 4H-SiC epilayers by low-pressure hot-wall chemical vapor deposition
    Sun, Guosheng
    Ning, Jin
    Gong, Quancheng
    Gao, Xin
    Wang, Lei
    Liu, Xingfang
    Zeng, Yiping
    Li, Jinmin
    SILICON CARBIDE AND RELATED MATERIALS 2005, PTS 1 AND 2, 2006, 527-529 : 191 - +
  • [5] Growth and characterization of 4H-SiC in vertical hot-wall chemical vapor deposition
    Fujihira, K
    Kimoto, T
    Matsunami, H
    JOURNAL OF CRYSTAL GROWTH, 2003, 255 (1-2) : 136 - 144
  • [6] Fast epitaxial growth of 4H-SiC by chimney-type vertical hot-wall chemical vapor deposition
    Kimoto, T., 1600, Japan Society of Applied Physics (40):
  • [7] Fast epitaxial growth of 4H-SiC by chimney-type vertical hot-wall chemical vapor deposition
    Kimoto, T
    Tamura, S
    Chen, Y
    Fujihira, K
    Matsunami, H
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 2001, 40 (4B): : L374 - L376
  • [8] The growth of low resistivity, heavily Al-doped 4H-SiC thick epilayers by hot-wall chemical vapor deposition
    Ji, Shiyang
    Kojima, Kazutoshi
    Ishida, Yuuki
    Saito, Shingo
    Kato, Tomohisa
    Tsuchida, Hidekazu
    Yoshida, Sadafumi
    Okumura, Hajime
    JOURNAL OF CRYSTAL GROWTH, 2013, 380 : 85 - 92
  • [9] High-purity 4H-SiC epitaxial growth by hot-wall chemical vapor deposition
    Nakazawa, S
    Kimoto, T
    Hashimoto, K
    Matsunami, H
    JOURNAL OF CRYSTAL GROWTH, 2002, 237 (1-4 II) : 1213 - 1218
  • [10] Morphology of basal plane dislocations in 4H-SiC homoepitaxial layers grown by chemical vapor deposition
    Zhang, X.
    Ha, S.
    Hanlumnyang, Y.
    Chou, C. H.
    Rodriguez, V.
    Skowronski, M.
    Sumakeris, J. J.
    Paisley, M. J.
    O'Loughlin, M. J.
    JOURNAL OF APPLIED PHYSICS, 2007, 101 (05)
1234