Morphology of basal plane dislocations in 4H-SiC homoepitaxial layers grown by chemical vapor deposition

被引：30
|
作者：
Zhang, X.
Ha, S.
Hanlumnyang, Y.
Chou, C. H.
Rodriguez, V.
Skowronski, M.
Sumakeris, J. J.
Paisley, M. J.
O'Loughlin, M. J.
机构：
[1] Carnegie Mellon Univ, Pittsburgh, PA 15213 USA
[2] Cree Inc, Durham, NC 27703 USA
来源：
JOURNAL OF APPLIED PHYSICS | 2007年 / 101卷 / 05期
关键词：
D O I：
10.1063/1.2437585
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The morphology of basal plane dislocations (BPDs) in 4H-SiC homoepitaxial layers has been investigated by plan-view transmission x-ray topography and molten KOH etching. Three types of BPDs are distinguished based on their morphologies. These include interfacial dislocations, curved dislocations, and circular loop dislocations around micropipes. Their characteristics are studied in detail and possible sources of their formation during epitaxy are discussed. (c) 2007 American Institute of Physics.
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页数：8
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