Fast homoepitaxial growth of 4H-SiC with low basal-plane dislocation density and low trap concentration by hot-wall chemical vapor deposition (vol 306, pg 297, 2007)

被引：1

|

作者：

Hori, Tsutomu

Danno, Katsunori

Kimoto, Tsunenobu

机构：

[1] Kyoto Univ, Dept Elect Sci & Engn, Kyoto 6158510, Japan

[2] NEOMAX Co, Hitachi Metals Ltd, Magnet Mat Res Lab, Mishima, Osaka 6180013, Japan

来源：

JOURNAL OF CRYSTAL GROWTH | 2007年 / 308卷 / 02期

关键词：

D O I：

10.1016/j.jcrysgro.2007.08.023

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

收藏

页码：430 / 430

页数：1

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