Fast homoepitaxial growth of 4H-SiC with low basal-plane dislocation density and low trap concentration by hot-wall chemical vapor deposition (vol 306, pg 297, 2007)

被引：1
|
作者：
Hori, Tsutomu
Danno, Katsunori
Kimoto, Tsunenobu
机构：
[1] Kyoto Univ, Dept Elect Sci & Engn, Kyoto 6158510, Japan
[2] NEOMAX Co, Hitachi Metals Ltd, Magnet Mat Res Lab, Mishima, Osaka 6180013, Japan
来源：
JOURNAL OF CRYSTAL GROWTH | 2007年 / 308卷 / 02期
关键词：
D O I：
10.1016/j.jcrysgro.2007.08.023
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
引用
收藏
页码：430 / 430
页数：1
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