Picosecond spin relaxation in low-temperature-grown GaAs

被引：4
|
作者：
Uemura, M. [1 ]
Honda, K. [1 ]
Yasue, Y. [1 ]
Lu, S. L. [2 ]
Dai, P. [2 ]
Tackeuchi, A. [1 ]
机构：
[1] Waseda Univ, Dept Appl Phys, Tokyo 1698555, Japan
[2] Chinese Acad Sci, Suzhou Inst Nanotech & Nanobion, Suzhou, Peoples R China
来源：
APPLIED PHYSICS LETTERS | 2014年 / 104卷 / 12期
关键词：
GAAS/ALGAAS QUANTUM-WELLS; CARRIER LIFETIME; DYNAMICS; PHOTOLUMINESCENCE; SEMICONDUCTORS; ELECTRONS; RADIATION; BAND;
D O I：
10.1063/1.4869211
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The spin relaxation process of low-temperature-grown GaAs is investigated by spin-dependent pump and probe reflectance measurements with a sub-picosecond time resolution. Two very short carrier lifetimes of 2.0 ps and 28 ps, which can be attributed to nonradiative recombinations related to defects, are observed at 10 K. The observed spin polarization shows double exponential decay with spin relaxation times of 46.2 ps (8.0 ps) and 509 ps (60 ps) at 10K (200 K). The observed picosecond spin relaxation, which is considerably shorter than that of conventional GaAs, indicates the strong relevance of the Elliott-Yafet process as the spin relaxation mechanism. For the first (second) spin relaxation component, the temperature and carrier density dependences of the spin relaxation time indicate that the Bir-Aronov-Pikus process is also effective at temperatures between 10K and 77 K, and that the D'yakonov-Perel' process is effective between 125K (77 K) and 200 K. (C) 2014 AIP Publishing LLC.
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页数：4
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