Characterization of femtosecond low-temperature-grown GaAs photoconductive switch

被引：0
|
作者：
Lin, WZ [1 ]
Liu, ZG
Liao, R
Zhang, HC
Guo, B
Wen, JH
Lai, TS
机构：
[1] Zhongshan Univ, State Key Lab Optoelect Mat & Tech, Guangzhou 510275, Peoples R China
[2] Zhongshan Univ, Dept Phys, Guangzhou 510275, Peoples R China
来源：
CHINESE PHYSICS LETTERS | 2002年 / 19卷 / 04期
关键词：
D O I：
暂无
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
A photoconductive response time, as short as 350 fs, of a low-temperature-grown GaAs (LT-GaAs) micro-coplanar photoconductive switch has been measured and modelled to the ultrafast trapping of the photoexcited carriers in LT-GaAs. The coherent interference of the pump and probe pulses results in a narrow spike photocurrent autocorrelation signal which maps the femtosecond optical pulses.
引用
收藏
页码：557 / 559
页数：3
相关论文
共 50 条
  • [1] Photoconductive switch using epitaxial lift-off low-temperature-grown GaAs
    Lan, T
    Ni, GQ
    [J]. ADVANCES IN MICROELECTRONIC DEVICE TECHNOLOGY, 2001, 4600 : 179 - 183
  • [2] Field screening in low-temperature-grown GaAs photoconductive antennas
    Siebert, KJ
    Lisauskas, A
    Löffler, T
    Roskos, HG
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2004, 43 (03): : 1038 - 1043
  • [3] FEMTOSECOND CARRIER KINETICS IN LOW-TEMPERATURE-GROWN GAAS
    ZHOU, XQ
    VANDRIEL, HM
    RUHLE, WW
    GOGOLAK, Z
    PLOOG, K
    [J]. APPLIED PHYSICS LETTERS, 1992, 61 (25) : 3020 - 3021
  • [4] Colloidal upconversion nanocrystals enable low-temperature-grown GaAs photoconductive switch operating at λ=1.55 μm
    Xiang, Hengyang
    Chaudhary, Mahima
    Tripon-Canseliet, Charlotte
    Chen, Zhuoying
    [J]. NANOTECHNOLOGY, 2021, 32 (45)
  • [5] Ultrabroadband terahertz radiation from low-temperature-grown GaAs photoconductive emitters
    Shen, YC
    Upadhya, PC
    Linfield, EH
    Beere, HE
    Davies, AG
    [J]. APPLIED PHYSICS LETTERS, 2003, 83 (15) : 3117 - 3119
  • [6] Observation of Long-Lived Screening in Low-Temperature-Grown GaAs Photoconductive Switches
    Loata, G.
    Loeffler, T.
    Thomson, M. D.
    Lisauskas, A.
    Roskos, H. G.
    [J]. 2007 CONFERENCE ON LASERS & ELECTRO-OPTICS/QUANTUM ELECTRONICS AND LASER SCIENCE CONFERENCE (CLEO/QELS 2007), VOLS 1-5, 2007, : 2296 - 2297
  • [7] Fabrication and subpicosecond optical response of low-temperature-grown GaAs freestanding photoconductive devices
    Adam, R
    Mikulics, M
    Förster, A
    Schelten, J
    Siegel, M
    Kordos, P
    Zheng, X
    Wu, S
    Sobolewski, R
    [J]. APPLIED PHYSICS LETTERS, 2002, 81 (18) : 3485 - 3487
  • [8] On the power dependence of 1.5 μm excitation of low-temperature-grown GaAs photoconductive antennas
    Jougataki, Kohei
    Tomiyasu, Yuki
    Hirao, Yuya
    Tominaga, Yoriko
    Kadoya, Yutaka
    [J]. 2014 39TH INTERNATIONAL CONFERENCE ON INFRARED, MILLIMETER, AND TERAHERTZ WAVES (IRMMW-THZ), 2014,
  • [9] Emission characteristics of photoconductive antennas based on low-temperature-grown GaAs and semi-insulating GaAs
    Tani, M
    Matsuura, S
    Sakai, K
    Nakashima, S
    [J]. APPLIED OPTICS, 1997, 36 (30): : 7853 - 7859
  • [10] Detection properties of photoconductive antennas fabricated on low-temperature-grown GaAs and ErAs: GaAs at subterahertz band
    Zhang, Jitao
    Tuo, Mingguang
    Liang, Min
    Xin, Hao
    [J]. OPTICAL ENGINEERING, 2020, 59 (06)
12345