Characterization of femtosecond low-temperature-grown GaAs photoconductive switch

被引：0
|
作者：
Lin, WZ [1 ]
Liu, ZG
Liao, R
Zhang, HC
Guo, B
Wen, JH
Lai, TS
机构：
[1] Zhongshan Univ, State Key Lab Optoelect Mat & Tech, Guangzhou 510275, Peoples R China
[2] Zhongshan Univ, Dept Phys, Guangzhou 510275, Peoples R China
来源：
CHINESE PHYSICS LETTERS | 2002年 / 19卷 / 04期
关键词：
D O I：
暂无
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
A photoconductive response time, as short as 350 fs, of a low-temperature-grown GaAs (LT-GaAs) micro-coplanar photoconductive switch has been measured and modelled to the ultrafast trapping of the photoexcited carriers in LT-GaAs. The coherent interference of the pump and probe pulses results in a narrow spike photocurrent autocorrelation signal which maps the femtosecond optical pulses.
引用
收藏
页码：557 / 559
页数：3
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