Ultrafast carrier dynamics of low-temperature-grown GaAs

被引：0

作者：

Wen, JH ^{[1
]}

Chne, YY ^{[1
]}

Huang, C ^{[1
]}

Zhang, HC ^{[1
]}

Lin, WZ ^{[1
]}

机构：

[1] Zhongshan Univ, Dept Phys, State Key Lab Ultrafast Laser Spect, Canton 510275, Peoples R China

来源：

JOURNAL OF INFRARED AND MILLIMETER WAVES | 1999年 / 18卷 / 03期

关键词：

LT-GaAs; femtosecond absorption saturation spectra; trapping by defects;

D O I：

暂无

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

The ultrafast dynamics of nonequilibrium carriers of LT-GaAs was studied using femtosecond spectroscopy. The effects of carrier initial scattering, carrier-phonon interaction and carrier trapping on carrier relaxation properties were analyzed. A carrier trapping time of 500fs was measured, which was found to increase with decreasing carrier excess energy.

引用

页码：195 / 200

页数：6

共 12 条

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