Influence of carrier injection on resistive switching of TiO2 thin films with Pt electrodes

被引：63
|
作者：
Kim, Kyung Min [1 ]
Choi, Byung Joon
Jeong, Doo Seok
Hwang, Cheol Seong
Han, Seungwu
机构：
[1] Seoul Natl Univ, Sch Mat Sci & Engn, Seoul 151744, South Korea
[2] Seoul Natl Univ, Interuniv Semicond Res Ctr, Seoul 151744, South Korea
[3] Ewha Womans Univ, Dept Phys, Seoul 120750, South Korea
[4] Ewha Womans Univ, Div Nano Sci, Seoul 120750, South Korea
来源：
APPLIED PHYSICS LETTERS | 2006年 / 89卷 / 16期
关键词：
D O I：
10.1063/1.2361268
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The influence of electron injection on the electric-pulse-induced resistive switching of Pt/TiO2 thin film/Pt structure was studied by current-voltage (I-V) measurements. The electron injection was increased by annealing the sample in a N-2 atmosphere or measuring the I-V characteristics at high temperatures (> 100 degrees C). The switching from the high-resistance state (HRS) to the low-resistance state by a filamentary mechanism was suppressed when the carrier injection by Schottky emission or space-charge-limited conduction (SCLC) was excessive. Interfacial potential barrier played a crucial role in determining the carrier injection. Switching was observed (not observed) when the HRS resistance was low (high) although SCLC was observed.
引用
收藏
页数：3
相关论文
共 50 条
  • [21] TiN electrode-induced bipolar resistive switching of TiO2 thin films
    Do, Young Ho
    Kwak, June Sik
    Bae, Yoon Cheol
    Lee, Jong Hyun
    Kim, Yongmin
    Im, Hyunsik
    Hong, Jin Pyo
    [J]. CURRENT APPLIED PHYSICS, 2010, 10 (01) : E71 - E74
  • [22] Study on the Resistive Switching Behaviors of TiO2 Thin Films by Pulsed Laser Deposition
    Cao Xun
    Li Xiao-Min
    Yu Wei-Dong
    Zhang Yi-Wen
    [J]. JOURNAL OF INORGANIC MATERIALS, 2009, 24 (01) : 49 - 52
  • [23] Structural characteristics and resistive switching properties of thermally prepared TiO2 thin films
    Cao, Xun
    Li, Xiaomin
    Yu, Weidong
    Zhang, Yiwen
    Yang, Rui
    Liu, Xinjun
    Kong, Jingfang
    Shen, Wenzhong
    [J]. JOURNAL OF ALLOYS AND COMPOUNDS, 2009, 486 (1-2) : 458 - 461
  • [24] Localized switching mechanism in resistive switching of atomic-layer-deposited TiO2 thin films
    Kim, Kyung Min
    Choi, Byung Joon
    Hwang, Cheol Seong
    [J]. APPLIED PHYSICS LETTERS, 2007, 90 (24)
  • [25] The influence of crystallinity on the resistive switching behavior of TiO2
    Maehne, H.
    Slesazeck, S.
    Jakschik, S.
    Dirnstorfer, I.
    Mikolajick, T.
    [J]. MICROELECTRONIC ENGINEERING, 2011, 88 (07) : 1148 - 1151
  • [26] Resistive switching in a Pt/TiO2/Pt thin film stack -: a candidate for a non-volatile ReRAM
    Schroeder, Herbert
    Jeong, Doo Seok
    [J]. MICROELECTRONIC ENGINEERING, 2007, 84 (9-10) : 1982 - 1985
  • [27] Impact of Annealing Ambience on Resistive Switching in Pt/TiO2/Pt Structure
    Wei, Guobin
    Goto, Yuta
    Ohta, Akio
    Makihara, Katsunori
    Murakami, Hideki
    Higashi, Seiichiro
    Miyazaki, Seiichi
    [J]. IEICE TRANSACTIONS ON ELECTRONICS, 2011, E94C (05): : 699 - 704
  • [28] Resistive switching mechanism of TiO2 thin films grown by atomic-layer deposition
    [J]. Choi, B.J, 1600, American Institute of Physics Inc. (98):
  • [29] Effect of firing atmosphere and bottom electrode on resistive switching mode in TiO2 thin films
    Lai, Chun-Hung
    Liu, Chih-Yi
    Hsu, Cheng-Hsing
    Lee, Yi-Mu
    Lin, Jenn-Sen
    Yang, Hsiwen
    [J]. THIN SOLID FILMS, 2013, 529 : 430 - 434
  • [30] Anode-interface localized filamentary mechanism in resistive switching of TiO2 thin films
    Kim, Kyung Min
    Choi, Byung Joon
    Shin, Yong Cheol
    Choi, Seol
    Hwang, Cheol Seong
    [J]. APPLIED PHYSICS LETTERS, 2007, 91 (01)
12345