Influence of carrier injection on resistive switching of TiO2 thin films with Pt electrodes

被引：63
|
作者：
Kim, Kyung Min [1 ]
Choi, Byung Joon
Jeong, Doo Seok
Hwang, Cheol Seong
Han, Seungwu
机构：
[1] Seoul Natl Univ, Sch Mat Sci & Engn, Seoul 151744, South Korea
[2] Seoul Natl Univ, Interuniv Semicond Res Ctr, Seoul 151744, South Korea
[3] Ewha Womans Univ, Dept Phys, Seoul 120750, South Korea
[4] Ewha Womans Univ, Div Nano Sci, Seoul 120750, South Korea
来源：
APPLIED PHYSICS LETTERS | 2006年 / 89卷 / 16期
关键词：
D O I：
10.1063/1.2361268
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The influence of electron injection on the electric-pulse-induced resistive switching of Pt/TiO2 thin film/Pt structure was studied by current-voltage (I-V) measurements. The electron injection was increased by annealing the sample in a N-2 atmosphere or measuring the I-V characteristics at high temperatures (> 100 degrees C). The switching from the high-resistance state (HRS) to the low-resistance state by a filamentary mechanism was suppressed when the carrier injection by Schottky emission or space-charge-limited conduction (SCLC) was excessive. Interfacial potential barrier played a crucial role in determining the carrier injection. Switching was observed (not observed) when the HRS resistance was low (high) although SCLC was observed.
引用
收藏
页数：3
相关论文
共 50 条
  • [41] Effect of post annealing on the resistive switching of TiO2 thin film
    Kim, Wan-Gee
    Rhee, Shi-Woo
    [J]. MICROELECTRONIC ENGINEERING, 2009, 86 (11) : 2153 - 2156
  • [42] Variation of switching mechanism in TiO2 thin film resistive random access memory with Ag and graphene electrodes
    Hu, Yushi
    Perello, David
    Yun, Minhee
    Kwon, Deok-Hwang
    Kim, Miyoung
    [J]. MICROELECTRONIC ENGINEERING, 2013, 104 : 42 - 47
  • [43] Highly Improved Uniformity in the Resistive Switching Parameters of TiO2 Thin Films by Inserting Ru Nanodots
    Yoon, Jung Ho
    Han, Jeong Hwan
    Jung, Ji Sim
    Jeon, Woojin
    Kim, Gun Hwan
    Song, Seul Ji
    Seok, Jun Yeong
    Yoon, Kyung Jean
    Lee, Min Hwan
    Hwang, Cheol Seong
    [J]. ADVANCED MATERIALS, 2013, 25 (14) : 1987 - 1992
  • [44] Resistive Switching in TiO2 Thin Films Using the Semiconducting In-Ga-Zn-O Electrode
    Seok, Jun Yeong
    Kim, Gun Hwan
    Kim, Jeong Hwan
    Kim, Un Ki
    Chung, Yoon Jang
    Song, Seul Ji
    Yoon, Jung Ho
    Yoon, Kyung Jin
    Lee, Min Hwan
    Kim, Kyung Min
    Hwang, Cheol Seong
    [J]. IEEE ELECTRON DEVICE LETTERS, 2012, 33 (04) : 582 - 584
  • [45] Identification of a determining parameter for resistive switching of TiO2 thin films -: art. no. 262907
    Rohde, C
    Choi, BJ
    Jeong, DS
    Choi, S
    Zhao, JS
    Hwang, CS
    [J]. APPLIED PHYSICS LETTERS, 2005, 86 (26) : 1 - 3
  • [46] Resistive switching behavior in amorphous and crystalline TiO2 thin films by sol-gel process
    Li, Ying
    Zhao, Gaoyang
    Zhou, Xiaofei
    Pan, Lining
    Ren, Yang
    [J]. JOURNAL OF SOL-GEL SCIENCE AND TECHNOLOGY, 2010, 56 (01) : 61 - 65
  • [47] Bipolar resistive switching properties of microcrystalline TiO2 thin films deposited by pulsed laser deposition
    Cao, Xun
    Li, Xiaomin
    Yu, Weidong
    Liu, Xinjun
    He, Xiliang
    [J]. MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE MATERIALS, 2009, 157 (1-3): : 36 - 39
  • [48] Forming free resistive switching in Au/TiO2/Pt stack structure
    Luo, W. B.
    Zhang, P.
    Shuai, Y.
    Pan, X. Q.
    Wu, Q. Q.
    Wu, C. G.
    Yang, C.
    Zhang, W. L.
    [J]. THIN SOLID FILMS, 2016, 617 : 63 - 66
  • [49] Characteristic electroforming behavior in Pt/TiO2/Pt resistive switching cells depending on atmosphere
    Jeong, Doo Seok
    Schroeder, Herbert
    Breuer, Uwe
    Waser, Rainer
    [J]. JOURNAL OF APPLIED PHYSICS, 2008, 104 (12)
  • [50] Characteristic electroforming behavior in Pt/ TiO2 /Pt resistive switching cells depending on atmosphere
    Jeong, Doo Seok
    Schroeder, Herbert
    Breuer, Uwe
    Waser, Rainer
    [J]. Journal of Applied Physics, 2008, 104 (12):
12345