Detailed analysis of Ga-rich current pathways created in an n-Al0.7Ga0.3N layer grown on an AlN template with dense macrosteps

被引：9

作者：

Nagasawa, Yosuke ^{[1
]}

Hirano, Akira ^{[1
]}

Ippommatsu, Masamichi ^{[1
]}

Sako, Hideki ^{[2
]}

Hashimoto, Ai ^{[2
]}

Sugie, Ryuichi ^{[2
]}

Honda, Yoshio ^{[3
]}

Amano, Hiroshi ^{[3
,4
,5
]}

Akasaki, Isamu ^{[5
,6
]}

Kojima, Kazunobu ^{[7
]}

Chichibu, Shigefusa F. ^{[3
,7
]}

机构：

[1] UV Craftory Co Ltd, Bldg D,2-98 Yashirodai, Nagoya, Aichi 4650092, Japan

[2] Toray Res Ctr Ltd, Otsu, Shiga 5208567, Japan

[3] Nagoya Univ, Inst Mat & Syst Sustainabil, Nagoya, Aichi 4648601, Japan

[4] Nagoya Univ, Venture Business Lab, Nagoya, Aichi 4648601, Japan

[5] Nagoya Univ, Akasaki Res Ctr, Nagoya, Aichi 4648603, Japan

[6] Meijo Univ, Fac Sci & Technol, Dept Mat Sci & Engn, Nagoya, Aichi 4688502, Japan

[7] Tohoku Univ, Inst Multidisciplinary Res Adv Mat, Sendai, Miyagi 9808577, Japan

来源：

APPLIED PHYSICS EXPRESS | 2020年 / 13卷 / 12期

关键词：

AlGaN; LED; Deep-ultraviolet; DUV;

D O I：

10.35848/1882-0786/abcb49

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

To clarify the behavior of the AlGaN in 20 nm wide Ga-rich current pathways in an n-AlGaN layer, which assists carrier localization in AlGaN-based light-emitting diodes, we performed a detailed analysis using an n-Al0.7Ga0.3N layer on AlN with dense macrosteps on a 1.0 degrees miscut sapphire substrate. Energy-dispersive X-ray spectra, obtained using cross-sectional scanning transmission electron microscopy calibrated by Rutherford backscattering and cross-sectional cathodoluminescence spectra, indicated that AlN mole fraction in the Ga-rich current pathways was nearly similar to 2/3. This result is consistent with those of other research groups, suggesting that metastable Al2/3Ga1/3N is created in Ga-rich current pathways. (c) 2020 The Japan Society of Applied Physics

引用

页数：5

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