Transmission electron microscopy investigation of inversion domain boundary in Al0.65Ga0.35N grown on AlN/sapphire template

被引：4
|
作者：
Sang, L. W. [1 ]
Fang, H. [1 ]
Qin, Z. X. [1 ]
Wang, X. Q. [1 ]
Shen, B. [1 ]
Yang, Z. J. [1 ]
Zhang, G. Y. [1 ]
Zhang, X. P. [2 ]
You, L. P. [2 ]
Yu, D. P. [2 ]
机构：
[1] Peking Univ, Dept Phys, State Key Lab Mesoscop Phys, Beijing 100871, Peoples R China
[2] Peking Univ, Electron Microscope Lab, Beijing 100871, Peoples R China
来源：
APPLIED PHYSICS LETTERS | 2009年 / 95卷 / 11期
基金：
中国国家自然科学基金;
关键词：
CHEMICAL-VAPOR-DEPOSITION; 0001; SAPPHIRE; GAN; LAYERS; DIFFRACTION; POLARITY; PLATE;
D O I：
10.1063/1.3231443
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
A kind of inversion domains (IDs) which originated from the tips of threading dislocations were observed in the Al0.65Ga0.35N layer by transmission electron microscopy (TEM). The IDs showed columnar structures with diameters of 10-20 nm. We find that the dislocations evolved into V-shape boundaries then form IDs. By high resolution TEM analysis, the atomic structure at the boundary was proved to be the IDB* structure, in which each atom remains fourfold coordinated without the formation of Ga-Ga or N-N bonds. (C) 2009 American Institute of Physics. [doi: 10.1063/1.3231443]
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页数：3
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