Comparison of spontaneous and piezoelectric polarization in GaN/Al0.65Ga0.35N multi-quantum-well structures

被引：21
|
作者：
Hogg, RA
Norman, CE
Shields, AJ
Pepper, M
Iizuka, N
机构：
[1] Toshiba Res Europe Ltd, Cambridge Res Lab, Cambridge CB4 0WE, England
[2] Toshiba Corp, Ctr Res & Dev, Saiwai Ku, Kawasaki, Kanagawa 2108582, Japan
来源：
APPLIED PHYSICS LETTERS | 2000年 / 76卷 / 11期
关键词：
D O I：
10.1063/1.126053
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We report a luminescence study of GaN/Al0.65Ga0.35N multi-quantum-well structures. The surface of the samples exhibits microcracking allowing the same quantum well to be measured under two different strain conditions. We can accurately describe the emission energies in the two strain conditions by considering piezoelectric polarization alone in contrast to the theoretical prediction that spontaneous polarization effects should dominate. (C) 2000 American Institute of Physics. [S0003-6951(00)03611-1].
引用
收藏
页码：1428 / 1430
页数：3
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