Piezoelectric effect on Al0.35-δInδGa0.65N/GaN heterostructures

被引：9
|
作者：
Lo, I [1 ]
Tsai, JK
Tu, LW
Hsieh, KY
Tsai, MH
Liu, CS
Huang, JH
Elhamri, S
Mitchel, WC
Sheu, JK
机构：
[1] Natl Sun Yat Sen Univ, Dept Phys, Kaohsiung, Taiwan
[2] Natl Sun Yat Sen Univ, Inst Mat Sci, Kaohsiung 80424, Taiwan
[3] USAF, Res Lab, MLPS, Wright Patterson AFB, Dayton, OH 45433 USA
[4] Natl Cent Univ, Inst Opt Sci, Chungli 32000, Taiwan
[5] Univ Dayton, Dept Phys, Dayton, OH 45469 USA
来源：
APPLIED PHYSICS LETTERS | 2002年 / 80卷 / 15期
关键词：
D O I：
10.1063/1.1469209
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Al0.35-deltaIndeltaGa0.65N/GaN heterostructures have been studied by using transmission electron microscopy, photoluminescence, and Shubnikov-de Haas (SdH) measurements. In the sample of delta<0.01%, two SdH oscillations beat each other due to the population of the lowest two subbands. The carrier concentrations of these two subbands are 1.398 and 1.248x10(13) cm(-2) and the electric field at the interface is reduced to 2.19x10(4) V/cm, which is one order of magnitude smaller than that of Al0.35Ga0.65N/GaN heterostructure. We suggest that a small fraction of In atoms in the Al0.35-delta In delta Ga0.65N can be used as a tuning parameter to control the strain and the piezoelectric field at the interface. (C) 2002 American Institute of Physics.
引用
收藏
页码：2684 / 2686
页数：3
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