Detailed analysis of Ga-rich current pathways created in an n-Al0.7Ga0.3N layer grown on an AlN template with dense macrosteps

被引：9
|
作者：
Nagasawa, Yosuke [1 ]
Hirano, Akira [1 ]
Ippommatsu, Masamichi [1 ]
Sako, Hideki [2 ]
Hashimoto, Ai [2 ]
Sugie, Ryuichi [2 ]
Honda, Yoshio [3 ]
Amano, Hiroshi [3 ,4 ,5 ]
Akasaki, Isamu [5 ,6 ]
Kojima, Kazunobu [7 ]
Chichibu, Shigefusa F. [3 ,7 ]
机构：
[1] UV Craftory Co Ltd, Bldg D,2-98 Yashirodai, Nagoya, Aichi 4650092, Japan
[2] Toray Res Ctr Ltd, Otsu, Shiga 5208567, Japan
[3] Nagoya Univ, Inst Mat & Syst Sustainabil, Nagoya, Aichi 4648601, Japan
[4] Nagoya Univ, Venture Business Lab, Nagoya, Aichi 4648601, Japan
[5] Nagoya Univ, Akasaki Res Ctr, Nagoya, Aichi 4648603, Japan
[6] Meijo Univ, Fac Sci & Technol, Dept Mat Sci & Engn, Nagoya, Aichi 4688502, Japan
[7] Tohoku Univ, Inst Multidisciplinary Res Adv Mat, Sendai, Miyagi 9808577, Japan
来源：
APPLIED PHYSICS EXPRESS | 2020年 / 13卷 / 12期
关键词：
AlGaN; LED; Deep-ultraviolet; DUV;
D O I：
10.35848/1882-0786/abcb49
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
To clarify the behavior of the AlGaN in 20 nm wide Ga-rich current pathways in an n-AlGaN layer, which assists carrier localization in AlGaN-based light-emitting diodes, we performed a detailed analysis using an n-Al0.7Ga0.3N layer on AlN with dense macrosteps on a 1.0 degrees miscut sapphire substrate. Energy-dispersive X-ray spectra, obtained using cross-sectional scanning transmission electron microscopy calibrated by Rutherford backscattering and cross-sectional cathodoluminescence spectra, indicated that AlN mole fraction in the Ga-rich current pathways was nearly similar to 2/3. This result is consistent with those of other research groups, suggesting that metastable Al2/3Ga1/3N is created in Ga-rich current pathways. (c) 2020 The Japan Society of Applied Physics
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页数：5
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