Al0.3Ga0.7N/GaN (10 nm)/Al0.1Ga0.9N HEMTs With Low Leakage Current and High Three-Terminal Breakdown Voltage

In this work, we presented a high performance AIGaN/GaN/AIGaN double heterostructure HEMT with a 10 nm channel layer and an Al0.1Ga0.9N back barrier layer. The fabricated devices exhibited an extremely low off-state drain leakage current of <10(-10) A/mm. An ON/OFF current ratio (I-ON/I-OFF) of up to 10(10) and a subthreshold swing (SS) of 63 mV/dec were attained due to the reduced leakage current and enhanced electron confinement. The presented devices with a gate-drain spacing (L-GD) of 22 mu m exhibited a soft breakdown voltage (V-BR) of 1860 V with the criteria of 0.1 mu A/mm and a hard V-BR of 2009 V combined with a specific on-resistance (R-ON,R-SP) of 10.6 m Omega.cm(2). Moreover, excellent high-temperature values for I-ON/I-OFF, SS, and V-BR were also attained. These results demonstrate a promising potential of the proposed devices for high power applications.