Probing deeper by hard x-ray photoelectron spectroscopy

被引:31
|
作者
Risterucci, P. [1 ]
Renault, O. [1 ]
Martinez, E. [1 ]
Detlefs, B. [1 ,2 ]
Delaye, V. [1 ]
Zegenhagen, J. [2 ]
Gaumer, C. [3 ]
Grenet, G. [4 ]
Tougaard, S. [5 ]
机构
[1] CEA, LETI, F-38054 Grenoble 09, France
[2] European Synchrotron Radiat Facil, F-38043 Grenoble, France
[3] STMicroelectronics, F-38926 Crolles, France
[4] Ecole Cent Lyon, INL, UMR CNRS 5270, F-69134 Ecully, France
[5] Univ Southern Denmark, Dept Phys Chem & Pharm, DK-5230 Odense M, Denmark
关键词
SURFACE; RANGE; XPS;
D O I
10.1063/1.4864488
中图分类号
O59 [应用物理学];
学科分类号
摘要
We report an hard x-ray photoelectron spectroscopy method combining high excitation energy (15 keV) and improved modelling of the core-level energy loss features. It provides depth distribution of deeply buried layers with very high sensitivity. We show that a conventional approach relying on intensities of the core-level peaks is unreliable due to intense plasmon losses. We reliably determine the depth distribution of 1 ML La in a high-kappa/metal gate stack capped with 50 nm a-Si. The method extends the sensitivity of photoelectron spectroscopy to depths beyond 50 nm. (C) 2014 AIP Publishing LLC.
引用
收藏
页数:4
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