Recent applications of hard x-ray photoelectron spectroscopy

被引:34
|
作者
Weiland, Conan [1 ]
Rumaiz, Abdul K. [2 ]
Pianetta, Piero [3 ]
Woicik, Joseph C. [1 ]
机构
[1] NIST, Gaithersburg, MD 20899 USA
[2] Brookhaven Natl Lab, Natl Synchrotron Light Source 2, Upton, NY 11973 USA
[3] SLAC Natl Accelerator Lab, Menlo Pk, CA 94025 USA
来源
关键词
ANGULAR-DISTRIBUTION PARAMETERS; AUGER-ELECTRON-SPECTROSCOPY; RANGE; 100-5000; EV; STANDING WAVES; PHOTOEMISSION-SPECTROSCOPY; VALENCE-BAND; OXIDE INTERFACES; KINETIC-ENERGY; HETEROJUNCTION DISCONTINUITIES; SEMICONDUCTOR HETEROJUNCTIONS;
D O I
10.1116/1.4946046
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
Recent applications of hard x-ray photoelectron spectroscopy (HAXPES) demonstrate its many capabilities in addition to several of its limitations. Examples are given, including measurement of buried interfaces and materials under in situ or in operando conditions, as well as measurements under x-ray standing-wave and resonant excitation. Physical considerations that differentiate HAXPES from photoemission measurements utilizing soft x-ray and ultraviolet photon sources are also presented.
引用
收藏
页数:21
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