Probing deeper by hard x-ray photoelectron spectroscopy

被引：31

作者：

Risterucci, P. ^{[1
]}

Renault, O. ^{[1
]}

Martinez, E. ^{[1
]}

Detlefs, B. ^{[1
,2
]}

Delaye, V. ^{[1
]}

Zegenhagen, J. ^{[2
]}

Gaumer, C. ^{[3
]}

Grenet, G. ^{[4
]}

Tougaard, S. ^{[5
]}

机构：

[1] CEA, LETI, F-38054 Grenoble 09, France

[2] European Synchrotron Radiat Facil, F-38043 Grenoble, France

[3] STMicroelectronics, F-38926 Crolles, France

[4] Ecole Cent Lyon, INL, UMR CNRS 5270, F-69134 Ecully, France

[5] Univ Southern Denmark, Dept Phys Chem & Pharm, DK-5230 Odense M, Denmark

来源：

APPLIED PHYSICS LETTERS | 2014年 / 104卷 / 05期

关键词：

SURFACE; RANGE; XPS;

D O I：

10.1063/1.4864488

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report an hard x-ray photoelectron spectroscopy method combining high excitation energy (15 keV) and improved modelling of the core-level energy loss features. It provides depth distribution of deeply buried layers with very high sensitivity. We show that a conventional approach relying on intensities of the core-level peaks is unreliable due to intense plasmon losses. We reliably determine the depth distribution of 1 ML La in a high-kappa/metal gate stack capped with 50 nm a-Si. The method extends the sensitivity of photoelectron spectroscopy to depths beyond 50 nm. (C) 2014 AIP Publishing LLC.

引用

页数：4

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