Characterization of silicon-on-insulator structures by high-resolution X-ray diffraction

被引：6
|
作者：
Antonova, IV [1 ]
Popov, VP
Bak-Misiuk, J
Domagala, JZ
机构：
[1] Russian Acad Sci, Inst Semicond Phys, Novosibirsk 630090, Russia
[2] Polish Acad Sci, Inst Phys, PL-02668 Warsaw, Poland
来源：
JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 2002年 / 149卷 / 08期
关键词：
D O I：
10.1149/1.1489688
中图分类号：
O646 [电化学、电解、磁化学];
学科分类号：
081704 ;
摘要：
Silicon-on insulator (SOI) structures obtained by direct bonding of wafers using a hydrogen cutting technology were characterized by high-resolution X-ray diffraction. The as-bonded SOI structures indicate some fluctuation of the lattice constant values due to hydrogen-related defects and radiation defects still present in the silicon film. The bonded interface is nonuniform, and the strain in the top silicon layer is high. Annealed SOI has a strain-free top silicon layer with a good Si/SiO2 interface. (C) 2002 The Electrochemical Society.
引用
收藏
页码：G490 / G493
页数：4
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