Characterization of silicon-on-insulator structures by high-resolution X-ray diffraction

被引：6

作者：

Antonova, IV ^{[1
]}

Popov, VP

Bak-Misiuk, J

Domagala, JZ

机构：

[1] Russian Acad Sci, Inst Semicond Phys, Novosibirsk 630090, Russia

[2] Polish Acad Sci, Inst Phys, PL-02668 Warsaw, Poland

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 2002年 / 149卷 / 08期

关键词：

D O I：

10.1149/1.1489688

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

Silicon-on insulator (SOI) structures obtained by direct bonding of wafers using a hydrogen cutting technology were characterized by high-resolution X-ray diffraction. The as-bonded SOI structures indicate some fluctuation of the lattice constant values due to hydrogen-related defects and radiation defects still present in the silicon film. The bonded interface is nonuniform, and the strain in the top silicon layer is high. Annealed SOI has a strain-free top silicon layer with a good Si/SiO2 interface. (C) 2002 The Electrochemical Society.

引用

页码：G490 / G493

页数：4

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