Study of the structural quality of heteroepitaxial silicon-on-sapphire structures by high-resolution X-ray diffraction, X-ray reflectivity, and electron microscopy

被引：7

作者：

Blagov, A. E. ^{[1
]}

Vasiliev, A. L. ^{[2
]}

Golubeva, A. S. ^{[1
]}

Ivanov, I. A. ^{[1
]}

Kondratev, O. A. ^{[1
]}

Pisarevsky, Yu. V. ^{[1
]}

Presnyakov, M. Yu. ^{[2
]}

Prosekov, P. A. ^{[1
]}

Seregin, A. Yu. ^{[1
]}

机构：

[1] Russian Acad Sci, AV Shubnikov Crystallog Inst, Moscow 119333, Russia

[2] Natl Res Ctr, Kurchatov Inst, Moscow 123182, Russia

来源：

CRYSTALLOGRAPHY REPORTS | 2014年 / 59卷 / 03期

基金：

俄罗斯基础研究基金会;

关键词：

DENSITY; INTERFACE; CRYSTAL; LATTICE;

D O I：

10.1134/S1063774514030043

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Heteroepitaxial silicon-on-sapphire (SOS) structures have been studied by high-resolution X-ray diffraction, X-ray reflectivity, electron microscopy, and electron diffraction. These methods yielded a large amount of complementary data on the defect structure of both the sapphire substrate and the silicon film, including integral and local (at the atomic-resolution level) information about the substrate, film, and sapphire-silicon interface.

引用

页码：315 / 322

页数：8

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A. L. Vasiliev
A. S. Golubeva
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O. A. Kondratev
Yu. V. Pisarevsky
M. Yu. Presnyakov
P. A. Prosekov
A. Yu. Seregin
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