AlGaAs/InGaP interfaces in structures prepared by MOVPE

被引：2
|
作者：
Kudela, Robert [1 ]
Kucera, Michal [1 ]
Dobrocka, Edmund [1 ]
Soltys, Jan [1 ]
机构：
[1] Slovak Acad Sci, Inst Elect Engn, Bratislava 84104, Slovakia
来源：
JOURNAL OF CRYSTAL GROWTH | 2009年 / 311卷 / 11期
关键词：
Interfaces; Metalorganic vapor phase epitaxy; Semiconducting indium gallium phosphide; Semiconducting aluminum compounds; Semiconducting gallium compounds; VAPOR-PHASE EPITAXY; AS-P EXCHANGE; QUANTUM-WELLS; SURFACE-STATES; PHOTOLUMINESCENCE; HETEROJUNCTION; TECHNOLOGY; GROWTH;
D O I：
10.1016/j.jcrysgro.2009.03.004
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
Al0.3Ga0.7As/In1-xGaxP structures were prepared by low-pressure MOVPE. Lattice matched and strained ones with top In1-xGaxP layers as well as reverse ones with top Al0.3Ga0.7As layers were examined. The structures were studied by photoluminescence, X-ray and atomic force microscope (AFM) methods. An additional photoluminescence peak from the Al0.3Ga0.7As/In1-xGaxP interface was observed in our samples and it was attributed to a type-II band offset. A conduction band offset of 0.121 eV was measured in the Al0.3Ga0.7As/In0.485Ga0.515P lattice-matched structure and a linear dependence of the conduction band offset on In1-xGaxP composition, with a zero offset in the Al0.3Ga0.7As/In0.315Ga0.685P structure, was determined. The valence band discontinuity had a nearly constant value of 0.152 eV. (C) 2009 Elsevier B.V. All rights reserved.
引用
收藏
页码：3123 / 3129
页数：7
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