Dark current of AlGaAs/GaAs n-QWIP prepared on patterned (001) GaAs substrate by MOVPE

被引：0
|
作者：
Strichovanec, P. [1 ]
Kudela, R.
Vavra, I.
Srnanek, R. [2 ]
Novak, J.
机构：
[1] Slovak Acad Sci, Inst Elect Engn, Dubravska Cesta 9, SK-84239 Bratislava, Slovakia
[2] Fac Electtech Engn Comp Sci, Bratislava, Slovakia
来源：
ASDAM '06: SIXTH INTERNATIONAL CONFERENCE ON ADVANCED SEMICONDUCTOR DEVICES AND MICROSYSTEMS, CONFERENCE PROCEEDINGS | 2006年
关键词：
D O I：
10.1109/ASDAM.2006.331196
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A 400 mu m x 400 mu m sized square quantum-well infrared photodetector with 30 periods of the GaAs/Al0.3Ga0.7As multiple quantum well has been prepared on patterned (001) GaAs substrate. The absorption spectrum at room temperature with normal incidence geometry is peaked at 9 mu m with a full width at half maximum (FWHM) of 3,7 mu m. Dark current with influence of 300K background was measured at room temperature and at 77K.
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收藏
页码：233 / 236
页数：4
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