Optical properties of InGaP(As) quantum dots in GaAs/AlGaAs/InGaP/InGaAs heterostructures

Subject of study. InGaP(As) quantum dots in GaAs/AlGaAs/InGaP/InGaAs heterostructures were studied. Aim of study. The aim was to establish the correlation between the maximum photoluminescence wavelength of InGaP(As) semiconductor quantum dots and the location of InGaAs quantum wells within GaAs/AlGaAs/InGaP/InGaAs heterostructures. Method. InGaP(As) quantum dots were synthesized by molecular-beam epitaxy; phosphorus was replaced with arsenic in a thin InGaP layer during the epitaxial growth. The optical properties of these InGaP(As) quantum dots were investigated using photoluminescence spectroscopy. Main results. The results show that using an InGaAs quantum well and the formation surface for the InGaP layer, which is subsequently transformed into quantum dots, does not affect the maximum photoluminescence wavelength of the quantum dots. However, the photoluminescence peaks under a long-wave shift of 56 nm when the quantum dots are overgrown with a 5-nmthick InGaAs quantum well with an InAs molar fraction of 0.17. The measured surface density of the quantum dots is 1.3 x 1012 cm-2. Practical significance. The results obtained from the analysis of the optical properties of the synthesized InGaP(As) quantum dots will serve as a foundation for the fabrication of active regions for