Growth and characterization of InGaAs/InGaP quantum dots for midinfrared photoconductive detector

被引：144
|
作者：
Kim, S [1 ]
Mohseni, H [1 ]
Erdtmann, M [1 ]
Michel, E [1 ]
Jelen, C [1 ]
Razeghi, M [1 ]
机构：
[1] Northwestern Univ, Dept Elect & Comp Engn, Ctr Quantum Devices, Evanston, IL 60208 USA
来源：
APPLIED PHYSICS LETTERS | 1998年 / 73卷 / 07期
关键词：
D O I：
10.1063/1.122053
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We report InGaAs quantum dot intersubband infrared photodetectors grown by low-pressure metalorganic chemical vapor deposition on semi-insulating GaAs substrates. The optimum growth conditions were studied to obtain uniform InGaAs quantum dots constructed in an InGaP matrix. Normal incidence photoconductivity was observed at a peak wavelength of 5.5 mu m with a high responsivity of 130 mA/W and a detectivity of 4.74x 10(7) cm H-1/2/W at 77 K. (C) 1998 American Institute of Physics.
引用
收藏
页码：963 / 965
页数：3
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